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Room Temperature Nanoscale Ferroelectricity in Magnetoelectric GaFeO3 Epitaxial Thin Films
- Publication Year :
- 2013
-
Abstract
- We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in epitaxial thin films of gallium ferrite. Further, temperature dependent impedance analysis with and without the presence of an external magnetic field clearly reveals a pronounced magneto-dielectric effect across the magnetic transition temperature. In addition, our first principles calculations show that Fe ions are not only responsible for ferrimagnetism as observed earlier, but also give rise to the observed ferroelectricity, making GFO an unique single phase multiferroic.<br />15 pages, 4 main figures
- Subjects :
- Condensed Matter - Materials Science
Materials science
Condensed matter physics
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
General Physics and Astronomy
chemistry.chemical_element
Ferroelectricity
Magnetic field
chemistry
Ferrimagnetism
Electric field
Ferrite (magnet)
Multiferroics
Thin film
Gallium
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....bb6feb688a87d9c9a47fd930e63e3a23