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Monte Carlo model of resistance evolution in embedded PCM with Ge-rich GST

Authors :
Elisabetta Palumbo
Roberto Annunziata
Daniele Ielmini
Paola Zuliani
M. Borghi
Octavian Melnic
Publication Year :
2019
Publisher :
Institute of Electrical and Electronics Engineers Inc., 2019.

Abstract

This work presents an optimized model for resistance evolution in PCM cells with Ge-rich GeSbTe (GST) alloy as active material. Unlike conventional Ge 2 Sb 2 Te 5 , the low-resistance (set) state of Ge-rich GST shows a resistance drift to high resistance R, similar to the high resistance (reset) state, which could be a potential risk for data reliability. We develop a Monte Carlo (MC) model which predicts the time evolution of R at the statistical level of a memory array at various temperature T. The model is validated against variable temperature annealing, such as the soldering profile in embedded PCM, supporting the good reliability of Ge-rich GST at high T.

Details

Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....bb18300e12e3552bfc4d5c5c1d75f538