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Image acceleration of highly charged ions on metal, semiconductor, and insulator surfaces
- Source :
- Physical Review A, Physical Review A, 1997, 55 (4), pp.R2523-R2526. ⟨10.1103/PhysRevA.55.R2523⟩
- Publication Year :
- 1997
- Publisher :
- HAL CCSD, 1997.
-
Abstract
- Very slow, highly charged ions impinging on metal surfaces are known to be accelerated by their image and to drop irremediably on the surfaces which they touch or slightly penetrate. We present experiments which demonstrate that above insulators or semiconductors, at normal incidence, the ions are backscattered at a certain distance from the surface and do not touch it. This finding is explained by the transient buildup of positive charges due to the removal of {ital valence} electrons, which overcome the acceleration of the ion by its own image. This effect is found to cancel out at grazing incidence. {copyright} {ital 1997} {ital The American Physical Society}
- Subjects :
- Physics
Valence (chemistry)
Silicon
business.industry
Computer Science::Information Retrieval
chemistry.chemical_element
Insulator (electricity)
Electron
[CHIM.MATE]Chemical Sciences/Material chemistry
Atomic and Molecular Physics, and Optics
Metal semiconductor
Ion
Metal
Semiconductor
chemistry
Physics::Plasma Physics
visual_art
visual_art.visual_art_medium
[CHIM]Chemical Sciences
Atomic physics
business
Subjects
Details
- Language :
- English
- ISSN :
- 24699926 and 24699934
- Database :
- OpenAIRE
- Journal :
- Physical Review A, Physical Review A, 1997, 55 (4), pp.R2523-R2526. ⟨10.1103/PhysRevA.55.R2523⟩
- Accession number :
- edsair.doi.dedup.....bb100b92ba36c1955d97497e4567e39b
- Full Text :
- https://doi.org/10.1103/PhysRevA.55.R2523⟩