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Temperature dependence of droop onset in optically pumped intrinsic InGaAs/InP heterostructures
- Publication Year :
- 2013
- Publisher :
- AIP Publishing, 2013.
-
Abstract
- Although conventional III-V compound semiconductors are often considered not to exhibit an efficiency droop, a pronounced low temperature droop was recently measured in AlGaInP/GaAs multi-quantum well structures. In this work, we investigate the efficiency droop in simple optically pumped lattice matched InGaAs/InP single well heterostructures to exclude charge transport related effects from the measurements. The results show that droop is present in this very simplistic setup and, furthermore, starts approximately at the same carrier density as in typical III-N structures. Our results suggest that in its most fundamental form, droop can be explained by Auger-like processes.
- Subjects :
- III‐V semiconductors
Materials science
Photoluminescence
Physics and Astronomy (miscellaneous)
Condensed matter physics
business.industry
Physics
quantum mechanics
Heterojunction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gallium arsenide
chemistry.chemical_compound
Condensed Matter::Materials Science
photoelectric conversion
Charge-carrier density
chemistry
Computer Science::Systems and Control
laser efficiency
Lattice (order)
materials properties
Optoelectronics
Compound semiconductor
Voltage droop
business
Quantum well
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....baa691ed717304118334e2b3edfe690f