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Liquid‐Gated Organic Electronic Devices Based on High‐Performance Solution‐Processed Molecular Semiconductor
- Source :
- Advanced Electronic Materials. 3:1700159
- Publication Year :
- 2017
- Publisher :
- Wiley, 2017.
-
Abstract
- High-mobility organic semiconductors such as [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives are potential candidates for ultrasensitive biosensors. Here 2,7-dioctyl BTBT (C8-BTBT-C8)-based liquid-gated organic electronic devices are demonstrated with two device architectures, viz. electrolyte-gated organic field-effect transistor (EGOFET) and electrolyte-gated organic synapstor (EGOS), and different electrode materials, viz. gold and poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). EGOFETs exhibit a mean transconductance of about 45 µS, on a par with literature, and a max value up to 256 µS at the state-of-the-art in aqueous electrolyte, with a mean product of charge mobility and effective capacitance of about 0.112 and 0.044 µS V−1 for gold and PEDOT:PSS electrodes, respectively. EGOSs exhibit a dynamic response with 15 ms characteristic timescale with Au electrodes and about twice with PEDOT:PSS electrodes. These results demonstrate a promising route for sensing applications in physiological environment based on fully solution-processed whole-organic electronic devices featuring ultrahigh sensitivity and fast response.
- Subjects :
- organic bioelectronics, EGOFET, EGOS, C8-BTBT, synapstor
Materials science
business.industry
Transconductance
Transistor
Benzothiophene
Nanotechnology
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Electronic, Optical and Magnetic Materials
law.invention
Organic semiconductor
Polystyrene sulfonate
chemistry.chemical_compound
chemistry
PEDOT:PSS
law
Electrode
Optoelectronics
0210 nano-technology
business
Biosensor
Subjects
Details
- ISSN :
- 2199160X
- Volume :
- 3
- Database :
- OpenAIRE
- Journal :
- Advanced Electronic Materials
- Accession number :
- edsair.doi.dedup.....ba17efa5cb87fa5c0bddddc13dbe8d72
- Full Text :
- https://doi.org/10.1002/aelm.201700159