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Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells
- Source :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2013, 102 (24), pp.242408, Applied Physics Letters, 2013, 102 (24), pp.242408
- Publication Year :
- 2013
- Publisher :
- HAL CCSD, 2013.
-
Abstract
- International audience; We demonstrate the electrical control of the electron spin relaxation in GaAs/AlGaAs multiple quantum wells grown on (111)A substrate. By embedding the wells in a NIP structure, the application of an external bias yields a large increase of the electron spin relaxation time due to the compensation of the Dresselhaus spin-splitting by the Rashba one. Depending on the direction of the applied electric field, the electron spin relaxation can be slowed-down or sped-up. It can be tuned by a factor 50 at 75 K and still by a factor 2 at 250 K.
- Subjects :
- Magnetic ordering
Electric fields
Physics and Astronomy (miscellaneous)
Stark effect
Multiple quantum
Electronic bandstructure
Substrate (electronics)
Zero field splitting
01 natural sciences
010305 fluids & plasmas
Gallium arsenide
chemistry.chemical_compound
Electric field
0103 physical sciences
010306 general physics
Quantum well
Physics
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics]
Condensed matter physics
Spin polarization
Photoluminescence spectroscopy
Condensed Matter::Other
Relaxation (NMR)
Leptons
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Electronic transport
Quantum wells
chemistry
Semiconductors
Time-resolved photoluminescence
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2013, 102 (24), pp.242408, Applied Physics Letters, 2013, 102 (24), pp.242408
- Accession number :
- edsair.doi.dedup.....b73722c85abfea37d4e85b6788da5cca