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Oxide-diluted magnetic semiconductors: a review of the experimental status
- Source :
- Journal of Physics: Condensed Matter, Journal of Physics: Condensed Matter, 2003, 15 (37), pp.R1583-R1601. ⟨10.1088/0953-8984/15/37/R01⟩
- Publication Year :
- 2003
- Publisher :
- IOP Publishing, 2003.
-
Abstract
- Oxide-diluted magnetic semiconductors (O-DMS) have attracted a great deal of interest in recent years due to the possibility of inducing room temperature ferromagnetism. These materials are of particular interest for spintronic devices such as spin valves. This review describes the experimental status of the O-DMS including the recent results on ZnO- and TiO2-based systems.
- Subjects :
- [PHYS]Physics [physics]
Materials science
Spintronics
Condensed matter physics
Magnetism
Spin valve
Oxide
Nanotechnology
Giant magnetoresistance
[CHIM.MATE]Chemical Sciences/Material chemistry
Magnetic semiconductor
Condensed Matter Physics
chemistry.chemical_compound
Magnetization
chemistry
Ferromagnetism
[CHIM]Chemical Sciences
General Materials Science
Subjects
Details
- ISSN :
- 1361648X and 09538984
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- Journal of Physics: Condensed Matter
- Accession number :
- edsair.doi.dedup.....b71d12af23861482da2f6d10c388d0b2
- Full Text :
- https://doi.org/10.1088/0953-8984/15/37/r01