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Compact Modeling of Nanoscale Trapezoidal FinFETs
- Source :
- IEEE Transactions on Electron Devices, IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (2), pp.324-332. ⟨10.1109/TED.2013.2284503⟩
- Publication Year :
- 2014
- Publisher :
- HAL CCSD, 2014.
-
Abstract
- International audience; An analytical compact model for the drain current of undoped or lightly doped nanoscale FinFETs with trapezoidal cross section is proposed. The compact model of rectangular FinFETs is extended to trapezoidal FinFETs using equivalent nonplanar device parameters and corner effects. The model has been validated by comparing the results with those of 3-D numerical device simulations. The very good accuracy of the drain current and transcapacitances makes the proposed model suitable for implementation in circuit simulation tools.
- Subjects :
- drain current
Materials science
business.industry
Doping
Compact modeling
Hardware_PERFORMANCEANDRELIABILITY
Electronic, Optical and Magnetic Materials
nanoscale trapezoidal FinFETs
Cross section (physics)
transcapacitances
MOSFET
Electronic engineering
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Electrical and Electronic Engineering
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
business
Drain current
Nanoscopic scale
Device parameters
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices, IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2014, 61 (2), pp.324-332. ⟨10.1109/TED.2013.2284503⟩
- Accession number :
- edsair.doi.dedup.....b60faf16d1adc8e835100e2ff3eed309
- Full Text :
- https://doi.org/10.1109/TED.2013.2284503⟩