Back to Search
Start Over
High-power quantum-dot superluminescent diodes with p-doped active region
- Source :
- IEEE Photonics Technology Letters, 18(18), 1946-1948. Institute of Electrical and Electronics Engineers
- Publication Year :
- 2006
-
Abstract
- We demonstrate the use of p-doping in the active region of quantum-dot superluminescent diodes. Modal gain measurements and light output-current characteristics prove that p-doping is beneficial for achieving higher gain, higher output power, and better temperature stability
- Subjects :
- Modal gain
Materials science
business.industry
Doping
Superluminescent diode
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Power (physics)
Semiconductor quantum dots
Quantum dot
Optoelectronics
Thermal stability
Electrical and Electronic Engineering
business
Diode
Subjects
Details
- Language :
- English
- ISSN :
- 10411135
- Volume :
- 18
- Issue :
- 18
- Database :
- OpenAIRE
- Journal :
- IEEE Photonics Technology Letters
- Accession number :
- edsair.doi.dedup.....b5096865c2b2ed3b7216f2c095ef4666
- Full Text :
- https://doi.org/10.1109/lpt.2006.882303