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INTRINSIC QUANTUM HALL-EFFECT IN INAS/GA1-XINXSB CROSSED GAP HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS

Authors :
W. Lubczyński
K.S.H. Dalton
N.J. Mason
D.M. Symons
D. J. Barnes
M.S. Daly
Richard J. Warburton
N. Miura
Robert W. Martin
M. Lakrimi
P.J. Walker
M. van der Burgt
Robin J. Nicholas
Publication Year :
2016

Abstract

We report a study of the quantum Hall effect and Shubnikov-dc Haas oscillations in semimctallic type II heterostructures of the strained layer system InAs/Ga1−xInxSb which are almost intrinsic. In high magnetic fields up to 50 T, ρxy has large peaks, demonstrating the high degree of charge compensation in the system. Between these peaks, intrinsic quantum Hall minima arc observed, where ρxy approaches zero.

Details

Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....b508446cb32ee2fc7d36c65abdbe6589
Full Text :
https://doi.org/10.1016/0039-6028(94)90877-x