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INTRINSIC QUANTUM HALL-EFFECT IN INAS/GA1-XINXSB CROSSED GAP HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS
- Publication Year :
- 2016
-
Abstract
- We report a study of the quantum Hall effect and Shubnikov-dc Haas oscillations in semimctallic type II heterostructures of the strained layer system InAs/Ga1−xInxSb which are almost intrinsic. In high magnetic fields up to 50 T, ρxy has large peaks, demonstrating the high degree of charge compensation in the system. Between these peaks, intrinsic quantum Hall minima arc observed, where ρxy approaches zero.
- Subjects :
- Condensed matter physics
Chemistry
Semiconductor materials
Heterojunction
Surfaces and Interfaces
Quantum Hall effect
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Shubnikov–de Haas effect
Surfaces, Coatings and Films
Magnetic field
Condensed Matter::Materials Science
Quantum spin Hall effect
Materials Chemistry
Charge compensation
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....b508446cb32ee2fc7d36c65abdbe6589
- Full Text :
- https://doi.org/10.1016/0039-6028(94)90877-x