Materials and Defect Aspects of III-V and III-N Devices for High-Speed Analog/RF Applications

Authors :: Uthayasankaran Peralagu
Bertrand Parvais
Po-Chun Brent Hsu
V. Putcha
Eddy Simoen
Nadine Collaert
Niamh Waldron
Ming Zhao
Kenichiro Takakura
Hongyue Wang
Hao Yu
Yu, Shaofeng
Zhu, Xiaona
Tang, Ting-Ao
Physics
Electronics and Informatics
Source :: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Publication Year :: 2020
Publisher :: IEEE, 2020.
Abstract: This paper describes the application of Deep Level Transient Spectroscopy and Generation-Recombination Noise Spectroscopy to the study of trap levels in III-V and III-N materials and devices.

Subjects :: Materials science
Deep-level transient spectroscopy
Silicon
business.industry
chemistry.chemical_element
Noise spectroscopy
Gallium nitride
Trap (computing)
chemistry.chemical_compound
chemistry
Logic gate
Optoelectronics
Electrical and Electronic Engineering
Spectroscopy
business

Database :: OpenAIRE
Journal :: 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)
Accession number :: edsair.doi.dedup.....b48d48fd0653aed31b43fd47df41f3b2
Full Text :: https://doi.org/10.1109/icsict49897.2020.9278262

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