Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

Authors :: C. Rüster
Georg Schmidt
W. Ossau
Laurens W. Molenkamp
D. Keller
R. Fiederling
Taras Slobodskyy
Charles Gould
Publication Year :: 2004
Publisher :: arXiv, 2004.
Abstract: We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.<br />Comment: To be published in Applied Physics Letters