QD laser on InP substrate for 1.55 µm emission and beyond

InAs nanostructures formed on InP substrates allow the realization of devices working in telecommunication wavelength range between 1.4 and 1.65 µm. However due to the low lattice mismatch existing between InAs and InP, the self assembling process in InP is more complex than on GaAs substrates. First high density quantum wires obtained on InP(001) have been integrated in laser. Lasers emitting at room temperature have been achieved. For an infinite length cavity, a threshold current density per QD plane as low as 45 A/cm 2 is deduced. This result compares favourably with those obtained on quantum wells lasers. However, the stability of the threshold current with temperature, predicted for quantum dots laser is not observed. Thus, growth on non standard substrates such as miscut substrates or high index substrates have been investigated in order to achieve QDs on InP. On (113) B substrates, quantum dots in high density and with size comparable with those achieved on GaAs(001) have been obtained. Lasers with record threshold current have been obtained. However the modulation properties of the laser are not as good as predicted for ideal quantum dots lasers. Finally we present the attempts to extend the QD emission wavelength in the 2-3 µm region. © 2010 Copyright SPIE - The International Society for Optical Engineering. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 76081B