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Pinning of polymers and interfaces by random potentials

Authors :
Kenneth S. Alexander
Vladas Sidoravicius
Source :
Annals of Applied Probability, 16(2), 636-669, Ann. Appl. Probab. 16, no. 2 (2006), 636-669
Publication Year :
2005
Publisher :
arXiv, 2005.

Abstract

We consider a polymer, with monomer locations modeled by the trajectory of a Markov chain, in the presence of a potential that interacts with the polymer when it visits a particular site 0. Disorder is introduced by, for example, having the interaction vary from one monomer to another, as a constant $u$ plus i.i.d. mean-0 randomness. There is a critical value of $u$ above which the polymer is pinned, placing a positive fraction of its monomers at 0 with high probability. This critical point may differ for the quenched, annealed and deterministic cases. We show that self-averaging occurs, meaning that the quenched free energy and critical point are nonrandom, off a null set. We evaluate the critical point for a deterministic interaction ($u$ without added randomness) and establish our main result that the critical point in the quenched case is strictly smaller. We show that, for every fixed $u\in\mathbb{R}$, pinning occurs at sufficiently low temperatures. If the excursion length distribution has polynomial tails and the interaction does not have a finite exponential moment, then pinning occurs for all $u\in\mathbb{R}$ at arbitrary temperature. Our results apply to other mathematically similar situations as well, such as a directed polymer that interacts with a random potential located in a one-dimensional defect, or an interface in two dimensions interacting with a random potential along a wall.<br />Comment: Published at http://dx.doi.org/10.1214/105051606000000015 in the Annals of Applied Probability (http://www.imstat.org/aap/) by the Institute of Mathematical Statistics (http://www.imstat.org)

Details

ISSN :
10505164
Database :
OpenAIRE
Journal :
Annals of Applied Probability, 16(2), 636-669, Ann. Appl. Probab. 16, no. 2 (2006), 636-669
Accession number :
edsair.doi.dedup.....b365eb36672090cbd352d49610a23b2a
Full Text :
https://doi.org/10.48550/arxiv.math/0501028