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Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography
- Source :
- Nanotechnology. 23(12)
- Publication Year :
- 2012
-
Abstract
- The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 ± 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process.
Details
- ISSN :
- 13616528
- Volume :
- 23
- Issue :
- 12
- Database :
- OpenAIRE
- Journal :
- Nanotechnology
- Accession number :
- edsair.doi.dedup.....b30daa5704aebe586f9303688112a470