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X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates

Authors :
Giovanni Capellini
Monica De Seta
Vladimir M. Kaganer
Peter Zaumseil
Viktor S. Kopp
Kopp, V
Kaganer, Vm
Capellini, Giovanni
DE SETA, Monica
Zaumseil, P.
Source :
Physical Review B. 85
Publication Year :
2012
Publisher :
American Physical Society (APS), 2012.

Abstract

""We report on the experimental and theoretical investigation of the relaxation in Ge-rich SiGe\\\/Ge\\\/Si heterostructures. The experimental x-ray diffraction data are interpreted with the help of a model including both edge and 60 degrees misfit dislocations in the calculated x-ray scattering intensity. Our results show that highly positionally correlated edge dislocations dominate in the relaxation of the compressive strain at the Ge\\\/Si interface, while a smaller tensile strain at the SiGe\\\/Ge interfaces released by uncorrelated\\\/little correlated 60 degrees dislocations.""

Details

ISSN :
1550235X and 10980121
Volume :
85
Database :
OpenAIRE
Journal :
Physical Review B
Accession number :
edsair.doi.dedup.....b28a57ed7401260bbb76bb59dfd14c48
Full Text :
https://doi.org/10.1103/physrevb.85.245311