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X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates
- Source :
- Physical Review B. 85
- Publication Year :
- 2012
- Publisher :
- American Physical Society (APS), 2012.
-
Abstract
- ""We report on the experimental and theoretical investigation of the relaxation in Ge-rich SiGe\\\/Ge\\\/Si heterostructures. The experimental x-ray diffraction data are interpreted with the help of a model including both edge and 60 degrees misfit dislocations in the calculated x-ray scattering intensity. Our results show that highly positionally correlated edge dislocations dominate in the relaxation of the compressive strain at the Ge\\\/Si interface, while a smaller tensile strain at the SiGe\\\/Ge interfaces released by uncorrelated\\\/little correlated 60 degrees dislocations.""
- Subjects :
- Diffraction
Materials science
Strain relaxation
Condensed matter physics
Scattering
Silicon Germanium
Heterojunction
Edge (geometry)
Condensed Matter Physics
Microstructure
X-ray diffraction
Electronic, Optical and Magnetic Materials
Silicon-germanium
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
X-ray crystallography
Relaxation (physics)
Subjects
Details
- ISSN :
- 1550235X and 10980121
- Volume :
- 85
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi.dedup.....b28a57ed7401260bbb76bb59dfd14c48
- Full Text :
- https://doi.org/10.1103/physrevb.85.245311