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Defect formation in InGaAs/AlSb/InAs memory devices

Authors :
Aurelia Trevisan
Peter D. Hodgson
Dominic Lane
Manus Hayne
Paul M. Koenraad
Source :
Journal of Vacuum Science & Technology B. 41
Publication Year :
2023
Publisher :
American Vacuum Society, 2023.

Abstract

ULTRARAMTM is a novel floating-gate nonvolatile memory in which the oxide barrier of flash is replaced by a triple-barrier resonant tunneling structure comprising of multiple InAs/AlSb heterojunctions. The quality of the triple barrier resonant tunneling heterostructure of an ULTRARAMTM device in terms of interface sharpness and the presence of defects was analyzed by cross-sectional scanning tunneling microscopy. We observed two different types of defects: stacking faults originating in the layers below the triple barrier resonant tunneling structure and AlSb accumulations at the interface between the lower AlSb layer of the triple barrier resonant tunneling structure and the InGaAs channel. The InGaAs surface of a second sample was measured by atomic force microscopy in order to investigate whether its unevenness is caused by deposition of the AlSb layer or it is already present before the AlSb deposition process.

Details

ISSN :
21662754 and 21662746
Volume :
41
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology B
Accession number :
edsair.doi.dedup.....b1f8fd7bc55c36d852a7634672723ad3
Full Text :
https://doi.org/10.1116/6.0002677