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Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN

Authors :
Jonghyuk Jeon
Gwangwoo Kim
Seokwoo Jeon
Yung-Chang Lin
Yuta Sato
Hyeon Suk Shin
Byeong-Hyeok Sohn
Kazu Suenaga
Minsu Kim
J.E. Barrios-Vargas
Jinouk Song
Stephan Roche
Seunghyup Yoo
Minsu Park
Kyung Yeol Ma
National Research Foundation of Korea
Japan Society for the Promotion of Science
Ministry of Science, ICT and Future Planning (South Korea)
European Commission
Generalitat de Catalunya
Agencia Estatal de Investigación (España)
Ministerio de Ciencia, Innovación y Universidades (España)
Universidad Nacional Autónoma de México
Ministerio de Economía y Competitividad (España)
Source :
Nature Communications, Vol 11, Iss 1, Pp 1-6 (2020), Dipòsit Digital de Documents de la UAB, Universitat Autònoma de Barcelona, Nature Communications, Recercat: Dipósit de la Recerca de Catalunya, Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya), Digital.CSIC. Repositorio Institucional del CSIC, instname, Recercat. Dipósit de la Recerca de Catalunya
Publication Year :
2020
Publisher :
Nature Portfolio, 2020.

Abstract

Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. However, to date, the possible emergence of physical properties and functionalities monitored by the interfaces between metallic graphene and insulating h-BN remains largely unexplored. Here, we demonstrate a blue emitting atomic-resolved heterojunction between graphene and h-BN. Such emission is tentatively attributed to localized energy states formed at the disordered boundaries of h-BN and graphene. The weak blue emission at the heterojunctions in simple in-plane heterostructures of h-BN and graphene can be enhanced by increasing the density of the interface in graphene quantum dots array embedded in the h-BN monolayer. This work suggests that the narrowest, atomically resolved heterojunctions of in-plane two-dimensional heterostructures provides a future playground for optoelectronics.<br />This work was supported by the research funds (NRF-2017R1E1A1A01074493 and NRF-2019R1A4A1027934) and the grant (CASE-2013M3A6A5073173) from the centre for Advanced Soft Electronics under the Global Frontier Research Program through the National Research Foundation by the Ministry of Science and ICT, Korea. H.S.S. and K.S. thank the A3 foresight program for their collaboration. Y.S., Y.-C.L. and K.S. acknowledge JSPS KAKENHI Grant Numbers JP19K05223, JP18K14119 and JP16H06333, respectively. S.R. acknowledges the European Union’s Horizon 2020 research and innovation programme under Grant Agreement No. 881603 (Graphene Flagship). ICN2 is funded by the CERCA Programme/Generalitat de Catalunya, and is supported by the Severo Ochoa program from Spanish MINECO (Grant No. SEV-2017-0706). J.E.B.-V. acknowledges funding from PAIP Facultad de Química, UNAM (Grant No. 5000-9173).

Details

Language :
English
ISSN :
20411723
Volume :
11
Issue :
1
Database :
OpenAIRE
Journal :
Nature Communications
Accession number :
edsair.doi.dedup.....b14aca28463af46ccb839cb19013c7e3