Back to Search
Start Over
Excitons localization effects in GaAsN/GaAs epilayers grown by MOCVD
- Source :
- Materials Science and Engineering: C, Materials Science and Engineering: C, Elsevier, 2002, 21, pp.245-249
- Publication Year :
- 2002
- Publisher :
- HAL CCSD, 2002.
-
Abstract
- Optical studies of GaAs 1− x N x /GaAs epilayers grown by metal-organic chemical vapour deposition (MOCVD), with low nitrogen concentration (1.65% and 2.2%), have been achieved by a number of optical techniques such as photoluminescence (PL), photoreflectance (PR) spectroscopies and time-resolved PL (TR-PL) measurements in the nanosecond range. It has been shown that the increase of the nitrogen fraction causes a red shift of the PL emission band compared to the GaAs one. TR-PL results at 12 K reveal that the decay time is clearly dependent on the emission energy. It increases for lower emission energy. From the temperature PL decay lifetime study, we suggest that PL emission is dominated by the recombination of localized excitons trapped by potential fluctuations of the near band edge induced by compositional fluctuations in GaAsN epilayer.
- Subjects :
- 010302 applied physics
[PHYS]Physics [physics]
Range (particle radiation)
Photoluminescence
Materials science
Exciton
Analytical chemistry
chemistry.chemical_element
Bioengineering
02 engineering and technology
Chemical vapor deposition
Nanosecond
021001 nanoscience & nanotechnology
01 natural sciences
Nitrogen
Biomaterials
chemistry
Mechanics of Materials
0103 physical sciences
Metalorganic vapour phase epitaxy
0210 nano-technology
Recombination
ComputingMilieux_MISCELLANEOUS
Subjects
Details
- Language :
- English
- ISSN :
- 09284931
- Database :
- OpenAIRE
- Journal :
- Materials Science and Engineering: C, Materials Science and Engineering: C, Elsevier, 2002, 21, pp.245-249
- Accession number :
- edsair.doi.dedup.....b0951d3a69ca4caa1851bf7f1804cce0