Growth of Boron Nitride on (0001) AlN Templates by High Temperature-Hydride Vapor Phase Epitaxy (HT-HVPE)

International audience; One mu m-thick (0001) t-BN layers have been grown on w-AlN template by HT-HVPE (High Temperature Hydride Vapor Phase Epitaxy). The experimental set-up consists of a vertical cold-wall quartz reactor working at low pressure with an inductively heated graphite susceptor. The used reactants are ammonia (NH3) and boron trichloride (BCl3). As-grown BN layers have been characterized by XRD and TEM. The influence of the temperature and the N/B ratio of precursors in the gas phase, on the c-lattice parameter of BN layer, have been investigated in order to optimize the crystalline quality. For a deposition at a temperature of 1600 degrees C and a N/B ratio of 7.5, the growth of a 2 mu m-thick t-BN layer with lattice parameters (a and c) of 2.50 and 6.78 angstrom has been achieved.