Field emission properties of nano-composite carbon nitride films

Authors :: Ioannis Alexandrou
Christopher J. Kiely
Mark Baxendale
Nalin L. Rupesinghe
Gehan A. J. Amaratunga
Publication Year :: 1999
Publisher :: arXiv, 1999.
Abstract: A modified cathodic arc technique has been used to deposit carbon nitride thin films directly on n+ Si substrates. Transmission Electron Microscopy showed that clusters of fullerene-like nanoparticles are embedded in the deposited material. Field emission in vacuum from as-grown films starts at an electric field strength of 3.8 V/micron. When the films were etched in an HF:NH4F solution for ten minutes, the threshold field decreased to 2.6 V/micron. The role of the carbon nanoparticles in the field emission process and the influence of the chemical etching treatment are discussed.<br />Comment: 22 pages, 8 figures, submitted to J. Vac. Sc. Techn. B