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Edge effects in an insulating state of an electron-hole system in magnetic field
- Source :
- PHYSICA B 14th International Conference on High Magntic Fields in Semiconductor Physicis (SemiMag 2000). 298(1-4)
- Publication Year :
- 2001
-
Abstract
- We find that an InAs/GaSb based electron-hole system exhibits insulating behaviour when the numbers of occupied electron and hole Landau levels are equal. In this insulating state, the Hall resistance becomes symmetric under field reversal, and both the Hall and longitudinal resistances display reproducible fluctuations. We propose a simple model based on edge states to account for these properties, and show that a comparison to the conductivity measured from a Corbino disc is consistent with the model. (C) 2001 Elsevier Science B.V. All rights reserved.
- Subjects :
- Materials science
Condensed matter physics
Insulator (electricity)
Activation energy
Landau quantization
Electron
Electron hole
Conductivity
Condensed Matter Physics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Electronic, Optical and Magnetic Materials
Magnetic field
Edge states
Electrical and Electronic Engineering
Subjects
Details
- ISSN :
- 09214526
- Volume :
- 298
- Issue :
- 1-4
- Database :
- OpenAIRE
- Journal :
- PHYSICA B 14th International Conference on High Magntic Fields in Semiconductor Physicis (SemiMag 2000)
- Accession number :
- edsair.doi.dedup.....aeb5c866e7cf1f4a8c07e2b278877be4