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Edge effects in an insulating state of an electron-hole system in magnetic field

Authors :
N.J. Mason
J. C. Portal
B. Kardynal
Kei Takashina
Robin J. Nicholas
Duncan K. Maude
Source :
PHYSICA B 14th International Conference on High Magntic Fields in Semiconductor Physicis (SemiMag 2000). 298(1-4)
Publication Year :
2001

Abstract

We find that an InAs/GaSb based electron-hole system exhibits insulating behaviour when the numbers of occupied electron and hole Landau levels are equal. In this insulating state, the Hall resistance becomes symmetric under field reversal, and both the Hall and longitudinal resistances display reproducible fluctuations. We propose a simple model based on edge states to account for these properties, and show that a comparison to the conductivity measured from a Corbino disc is consistent with the model. (C) 2001 Elsevier Science B.V. All rights reserved.

Details

ISSN :
09214526
Volume :
298
Issue :
1-4
Database :
OpenAIRE
Journal :
PHYSICA B 14th International Conference on High Magntic Fields in Semiconductor Physicis (SemiMag 2000)
Accession number :
edsair.doi.dedup.....aeb5c866e7cf1f4a8c07e2b278877be4