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Composition of AlGaAs
- Source :
- Journal of Applied Physics. 81:1683-1694
- Publication Year :
- 1997
- Publisher :
- AIP Publishing, 1997.
-
Abstract
- Although the AlxGa1−xAs alloy system has been extensively investigated, there are still considerable uncertainties in measuring the value of x. Here a new AlxGa1−xAs calibration structure, grown by molecular beam epitaxy, has been used to establish unambiguous alloy compositions. Such “standard’’ AlxGa1−xAs layers were measured by high-resolution x-ray diffraction, photoluminescence, and Raman spectroscopy to determine the compositional variations of the measured physical parameters. The phenomenological equations derived from these measurements can now be used to establish the Al content of unknown alloys with confidence. In addition, the results show that Vegard’s law does not hold for the variation of the AlxGa1−xAs lattice constant with x. The small quadratic term has very important implications for a correct analysis of x-ray results.
- Subjects :
- Diffraction
III-V semiconductors
Photoluminescence
Materials science
Alloy
Analytical chemistry
General Physics and Astronomy
molecular beam epitaxial growth
lattice constants
engineering.material
Gallium arsenide
Condensed Matter::Materials Science
symbols.namesake
chemistry.chemical_compound
Lattice constant
Condensed matter physics
aluminium compounds
semiconductor epitaxial layers
calibration
gallium arsenide
X-ray diffraction
chemistry
X-ray crystallography
symbols
engineering
photoluminescence
Raman spectra
Raman spectroscopy
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 81
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....aeaf9ae5001ad04c6dc258a9aa41b209