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Precision comparison of the quantum Hall effect in graphene and gallium arsenide
- Publication Year :
- 2012
-
Abstract
- The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard uncertainty of our measurement of $8.7\times 10^{-11}$. The result places new tighter limits on any possible correction terms to the simple relation $R_{\rm K}=h/e^2$, and also demonstrates that epitaxial graphene samples are suitable for application as electrical resistance standards of the highest metrological quality. We discuss the characterisation of the graphene sample used in this experiment and present the details of the cryogenic current comparator bridge and associated uncertainty budget.
- Subjects :
- Physics
Condensed matter physics
Condensed Matter - Mesoscale and Nanoscale Physics
Graphene
General Engineering
FOS: Physical sciences
Heterojunction
Quantum Hall effect
Cryogenic current comparator
Metrology
law.invention
Gallium arsenide
chemistry.chemical_compound
Quality (physics)
Electrical resistance and conductance
chemistry
law
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....ad2895be8682167a67e6afed0ee8e86f