Back to Search
Start Over
Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal
- Source :
- Physical Review B
- Publication Year :
- 1995
- Publisher :
- The American Physical Society, 1995.
-
Abstract
- Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Phase (waves)
02 engineering and technology
semiconductors
021001 nanoscience & nanotechnology
Thermal diffusivity
01 natural sciences
photoacoustic measurements
Amplitude
Semiconductor
0103 physical sciences
heat-transmission
Ge single crystal
Monochromatic color
Atomic physics
0210 nano-technology
business
Single crystal
Frequency modulation
Excitation
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi.dedup.....ac9b4d6d03a393915aa5137bd62f3e34