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Band structure of the epitaxial Fe/MgO/GaAs(001) tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies
- Source :
- Applied Physics Letters, Applied Physics Letters, 2006, 89 (15), ⟨10.1063/1.2361273⟩, Applied Physics Letters, 2006, 89, pp.152106. ⟨10.1063/1.2361273⟩, Applied Physics Letters, American Institute of Physics, 2006, 89, pp.152106. ⟨10.1063/1.2361273⟩, Applied Physics Letters, American Institute of Physics, 2006, 89 (15), ⟨10.1063/1.2361273⟩
- Publication Year :
- 2006
- Publisher :
- HAL CCSD, 2006.
-
Abstract
- International audience; The electronic band structure in the epitaxial Fe∕MgO∕GaAs(001) tunnel junction has been studied by x-ray and ultraviolet photoelectron spectroscopy measurements. The Schottky barrier height (SBH) of Fe on MgO∕GaAs heterostructure is determined to be 3.3±0.1eV, which sets the Fe Fermi level at about 0.3eV above the GaAs valence band maximum. This SBH is also exactly the same as that measured from Fe on MgO monocrystal. After Fe deposition, no band bending change is observed in MgO and GaAs underlayers. On the contrary, Au and Al depositions led to clear variation of the band bending in both MgO and GaAs layers. This effect is analyzed as a fingerprint of defect states at the MgO∕GaAs interface.
- Subjects :
- 010302 applied physics
[PHYS]Physics [physics]
Condensed Matter - Materials Science
Materials science
Physics and Astronomy (miscellaneous)
Schottky barrier
Fermi level
Analytical chemistry
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Heterojunction
Epitaxy
01 natural sciences
[SPI.TRON]Engineering Sciences [physics]/Electronics
symbols.namesake
Band bending
Tunnel junction
0103 physical sciences
symbols
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
010306 general physics
Electronic band structure
ComputingMilieux_MISCELLANEOUS
Ultraviolet photoelectron spectroscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters, Applied Physics Letters, 2006, 89 (15), ⟨10.1063/1.2361273⟩, Applied Physics Letters, 2006, 89, pp.152106. ⟨10.1063/1.2361273⟩, Applied Physics Letters, American Institute of Physics, 2006, 89, pp.152106. ⟨10.1063/1.2361273⟩, Applied Physics Letters, American Institute of Physics, 2006, 89 (15), ⟨10.1063/1.2361273⟩
- Accession number :
- edsair.doi.dedup.....ab359bc14e788ed47e4753c2029cfe45
- Full Text :
- https://doi.org/10.1063/1.2361273⟩