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Cobalt–titanium multilayer thin films: Effect of thickness of titanium spacer layer on impedance properties

Authors :
Arif Kösemen
Sadullah Öztürk
Y. Sahin
Mustafa Erkovan
E. Şentürk
Mustafa Okutan
Senturk, E
Erkovan, M
Okutan, M
Kosemen, A
Ozturk, S
Sahin, Y
Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü
Şentürk, Erdoğan
Erkovan, Mustafa
Öztürk Muti, Serpil
Source :
Materials Science in Semiconductor Processing. 30:482-485
Publication Year :
2015
Publisher :
Elsevier BV, 2015.

Abstract

We investigated the impedance parameters of cobalt titanium (Co-Ti) multilayer thin films deposited on native oxidized Si (100) substrate under ultra-high vacuum (4 x 10(-8) mbar) by magnetron sputtering at room temperature. Electrical properties of Co/Ti/Co multilayer films were analyzed depending on the thickness of Ti spacer layer with the impedance spectroscopy as a function of frequency. Co/Ti multilayer films exhibited dielectric relaxation in both real and imaginary part of dielectric constants at the kilohertz frequency region and piezoelectric properties at the megahertz frequency region. We determined that the fabricated multilayer films have complex and super imposed type behavior when DC conductivity is used at lower frequency, resonance event and relaxation properties. (C) 2014 Elsevier Ltd. All rights reserved.

Details

ISSN :
13698001
Volume :
30
Database :
OpenAIRE
Journal :
Materials Science in Semiconductor Processing
Accession number :
edsair.doi.dedup.....ab12704636a0a0bf4bf7f5f856d05b92
Full Text :
https://doi.org/10.1016/j.mssp.2014.10.053