Enhancement of cortisol measurement sensitivity by laser illumination for AlGaN/GaN transistor biosensor

In this study, high electron mobility transistor (HEMT) device was used as an immuno biosensor to measure concentration of a stress hormone, cortisol, by using selective binding on cortisol monoclonal antibody (c-Mab). Also, the HEMT sensor was enhanced in its sensitivity through light illumination to generate photocurrent. The optical pumping could assist the biosensor to discriminate more detailed change, which could result in an increment of limit of detection (LOD) to 1.0 pM cortisol level. It was the lowest level of detection with semiconductor device-based cortisol biosensors and the enhancement of surface potential sensitivity was induced by laser light (532 nm). Output current amplificated by photocurrent was higher than dark original current at about 3.39% when gate voltage is applied with −3 V. Since the device could be applied to not only standard cortisol solution but also real human salivary sample, it is expected to apply for in vitro direct diagnosis of point-of-care test (POCT).