Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN

Recently, the ultrafast operation (∼20 ns) of a two-dimensional (2D) heterostructured nonvolatile memory (NVM) device was demonstrated, attracting considerable attention. However, there is no consensus on its physical origin. In this study, various 2D NVM device structures are compared. First, we reveal that the hole injection at the metal/MoS