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Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire
- Source :
- Nano Letters
-
Abstract
- Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.
- Subjects :
- Electron mobility
Materials science
Inorganic chemistry
Ammonia borane
Bioengineering
02 engineering and technology
Substrate (electronics)
Chemical vapor deposition
Nitride
010402 general chemistry
Epitaxy
01 natural sciences
chemistry.chemical_compound
General Materials Science
Wafer
business.industry
Mechanical Engineering
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
0104 chemical sciences
chemistry
Sapphire
Optoelectronics
0210 nano-technology
business
Subjects
Details
- Language :
- English
- ISSN :
- 15306992 and 15306984
- Volume :
- 16
- Issue :
- 5
- Database :
- OpenAIRE
- Journal :
- Nano Letters
- Accession number :
- edsair.doi.dedup.....a76e2cea0c23b1ebc3ff67bd202b3235
- Full Text :
- https://doi.org/10.1021/acs.nanolett.6b01051