Back to Search
Start Over
A new description of fast charge-trapping effects in GaN FETs
- Publication Year :
- 2015
- Publisher :
- Institute of Electrical and Electronics Engineers Inc., 2015.
-
Abstract
- A nonlinear multi-bias model oriented to accurately predict the effects of charge-trapping in Gallium Nitride (GaN) HEMTs is proposed. As a case study, we considered a 0.25-µm 8×75-µm GaN HEMT. The model is identified by using CW low-frequency time-domain data and validated through high-frequency vector nonlinear measurements.
- Subjects :
- Materials science
business.industry
Computer Networks and Communications
charge trapping
Gallium nitride
nonlinear model
Signal Processing
Electrical and Electronic Engineering
Charge (physics)
High-electron-mobility transistor
Trapping
NO
Nonlinear system
chemistry.chemical_compound
Computer Networks and Communication
chemistry
Nonlinear model
Optoelectronics
ING-INF/01 - ELETTRONICA
business
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....a6592d303b33160af36ac32ccdec6392