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ALD TaN from PDMAT in TSV Architectures

Authors :
Laurent Artaud
Arnaud Mantoux
Virginie Brizé
G. Berthomé
Stéphane Daniele
Elisabeth Blanquet
Raphaël Boichot
Ioana Nuta
Science et Ingénierie des Matériaux et Procédés (SIMaP)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Institut de recherches sur la catalyse et l'environnement de Lyon (IRCELYON)
Université Claude Bernard Lyon 1 (UCBL)
Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Champion, Yannick
Source :
ECS Transactions, ECS Transactions, Electrochemical Society, Inc., 2010, 33 (2), pp.183-193
Publication Year :
2010
Publisher :
HAL CCSD, 2010.

Abstract

In this study, we report the TaN ALD film growth from PDMAT, in Through-Silicon Vias with NH3 as nitrogen precursor and H2 as reducing agent. We report deposits on planar and patterned substrates with high aspect ratios (5 to 20). As a reference, TaN was deposited from PDMAT and NH3 only, and the influence of H2 injections as reducing agent is reported. H2 was introduced in two manners: either during the PDMAT pulse or during the NH3 pulse. The samples obtained when H2 is introduced during the PDMAT pulse show a lower amount of oxygen than the reference deposited with only PDMAT and NH3 as precursors. Unexpectedly, when H2 is introduced during the NH3 pulse, the oxygen content increases compared to the reference. An experimental study of the deposition parameters was carried out by in situ microgravimetry to explain the H2 influence on the TaN deposition.

Details

Language :
English
ISSN :
19385862 and 19386737
Database :
OpenAIRE
Journal :
ECS Transactions, ECS Transactions, Electrochemical Society, Inc., 2010, 33 (2), pp.183-193
Accession number :
edsair.doi.dedup.....a55c8d94fa15ce1e09d7f86c42857af9