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Dilute GaAsN and GaInAsN grown by liquid phase epitaxy
- Source :
- Journal of Physics: Conference Series, Journal of Physics: Conference Series, IOP Publishing, 2010, 223 (1), pp.012016. ⟨10.1088/1742-6596/223/1/012016⟩, Journal of Physics: Conference Series, 2010, 223 (1), pp.012016. ⟨10.1088/1742-6596/223/1/012016⟩
- Publication Year :
- 2010
- Publisher :
- HAL CCSD, 2010.
-
Abstract
- International audience; Dilute III-nitrides, such as GaAsN and GaInAsN, are of considerable current interest both from a fundamental point of view and for applications in solar cells, GaAs-based long-wavelength photodetectors and diode lasers. The addition of nitrogen leads to material properties that deviate strongly from those expected for conventional III-V solid solutions. The possibility was investigated to use liquid phase epitaxy to incorporate nitrogen in epitaxial GaAsN/GaAs and GaInAsN/GaAs heterostructures. The structures were grown from Ga- and Ga-In- melts containing powder GaN as a nitrogen source. The initial growth temperature was varied in the range 560°C − 660°C. The low temperature growth favors nitrogen incorporation in the epilayers. The optical transmission and photoluminescence spectra of a set of structures grown at different temperatures were studied showing ternary and quaternary dilute nitride solid solutions with nitrogen content about 0.2 at.%. The photoluminescence spectra show emission from localized nitrogen states as well.
- Subjects :
- History
Photoluminescence
Materials science
Analytical chemistry
chemistry.chemical_element
Crystal growth
02 engineering and technology
Nitride
Epitaxy
7. Clean energy
01 natural sciences
Education
0103 physical sciences
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
010302 applied physics
business.industry
Heterojunction
Atmospheric temperature range
021001 nanoscience & nanotechnology
Nitrogen
Computer Science Applications
chemistry
Optoelectronics
0210 nano-technology
business
Solid solution
Subjects
Details
- Language :
- English
- ISSN :
- 17426588 and 17426596
- Database :
- OpenAIRE
- Journal :
- Journal of Physics: Conference Series, Journal of Physics: Conference Series, IOP Publishing, 2010, 223 (1), pp.012016. ⟨10.1088/1742-6596/223/1/012016⟩, Journal of Physics: Conference Series, 2010, 223 (1), pp.012016. ⟨10.1088/1742-6596/223/1/012016⟩
- Accession number :
- edsair.doi.dedup.....a4f5a9124c8505900010a7ec17d2c187