Communication-phosphoric acid based proton conducting polymer electrolytes for organic field effect transistor gate dielectrics

A phosphoric acid (H3PO4)-polyvinyl alcohol (PVA) electrolyte was demonstrated as a gate dielectric for electrolyte-gated field-effect transistors (EGFETs). These devices exhibited high performance with sub 1 V operation, a high ON/OFF ratio >105 and a low subthreshold swing of 90 mV/decade. The results show the strong viability of proton conducting polymer electrolytes as gate dielectrics which open the door for further development of low-power EGFETs.