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Breakthroughs in Semiconductor Lasers
- Source :
- IEEE Photonics Journal, Vol 4, Iss 2, Pp 565-569 (2012)
- Publication Year :
- 2012
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2012.
-
Abstract
- The latest breakthroughs on the frontiers of semiconductor laser capabilities are presented. Achievements including the impressive advances in high-speed lasers with low pJ/bit energy consumption, high-power vertical external cavity surface emitting lasers (VECSELs), advances in Ill-nitrides, record-high temperature operation quantum dot lasers, the longest wavelength Type-I quantum well lasers to date, and the fascinating field of nanolasers with ultralow volume and threshold are all discussed.
- Subjects :
- lcsh:Applied optics. Photonics
Materials science
vertical external cavity surface emitting lasers (VECSELs)
quantum dots (QDs)
External cavity
Nanophotonics
Physics::Optics
semiconductor lasers
law.invention
Semiconductor laser theory
vertical cavity surface emitting lasers (VCSELs)
law
lcsh:QC350-467
Physics::Atomic Physics
Electrical and Electronic Engineering
Quantum well
nanolasers
business.industry
lcsh:TA1501-1820
Mid-infrared (IR) lasers
Laser
Atomic and Molecular Physics, and Optics
Semiconductor
Quantum dot laser
Optoelectronics
business
lcsh:Optics. Light
Subjects
Details
- ISSN :
- 19430655
- Volume :
- 4
- Database :
- OpenAIRE
- Journal :
- IEEE Photonics Journal
- Accession number :
- edsair.doi.dedup.....a47d56fe184226cd916b7d2723567c2b