Exchange biasing in MBE-grown Ni80Fe20/Fe50Mn50 bilayers

Authors :: RM Jungblut
A. Reinders
R Reinder Coehoorn
A.R. Ball
J. aan de Stegge
M.T. Johnson
P. J. van der Zaag
Ch. Sauer
Tgsm Theo Rijks
Physics of Nanostructures
Applied Physics
Source :: Journal of Magnetism and Magnetic Materials, 148(1-2), 300-306. Elsevier
Publication Year :: 1995
Abstract: The exchange biasing field (Heb) and coercive field (Hc) of molecular-beam-epitaxy (MBE) grown Cu/Ni80Fe20/Fe50Mn50 samples in [111], [001] and [110] orientations were investigated by Kerr effect measurements. A strong dependence of Heb and Hc on the growth orientation is observed. A strong uniaxial in-plane anisotropy introduced by the Fe50Mn50 layer was found for the [110]-oriented sample. Conversion electron Mossbauer studies revealed a roughness of 2–3 A and no significant moment reduction at the Ni80Fe20/Fe50Mn50 interface.

Subjects :: Materials science
Nuclear magnetic resonance
Kerr effect
Mössbauer effect
Condensed matter physics
Biasing
Crystal growth
Thin film
Coercivity
Condensed Matter Physics
Anisotropy
Electronic, Optical and Magnetic Materials
Molecular beam epitaxy

Language :: English
ISSN :: 03048853
Database :: OpenAIRE
Journal :: Journal of Magnetism and Magnetic Materials, 148(1-2), 300-306. Elsevier
Accession number :: edsair.doi.dedup.....9f5ee0ad44bdc4eb77547441448799fa

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