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Quantum dots and nanowires for photonics applications
- Source :
- ResearcherID
- Publication Year :
- 2016
-
Abstract
- We review our results on integrated photonic devices fabricated using In GaAs quantum-dots. Selective-area metal organic chemical vapor deposition (MOCVD) is used to grow the active region with quantum dots emitting at different wavelengths for fabrication of the integrated devices. We will also review the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures grown by MOCVD. In addition to binary nanowires, such as GaAs, In As, and InP, we have demonstrated ternary In GaAs and Alga as nanowires. Core-shell nanowires consisting of GaAs cores with Alga as shells, and core-multi shell nanowires with several alternating shells of Alga as and GaAs, exhibit strong photoluminescence. Axial segments of In GaAs have been incorporated within GaAs nanowires to form GaAs/In GaAs nanowire superlattices.
- Subjects :
- Materials science
Photoluminescence
business.industry
Condensed Matter::Other
Superlattice
Nanowire
Physics::Optics
Heterojunction
Chemical vapor deposition
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Gallium arsenide
chemistry.chemical_compound
Condensed Matter::Materials Science
chemistry
Quantum dot
Optoelectronics
Metalorganic vapour phase epitaxy
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- ResearcherID
- Accession number :
- edsair.doi.dedup.....9f01dd19db90736571f77c3cad03f7a4