A macroscopic model for electron transport in silicon using analytic descriptions for both the electron bands and the phonon dispersion relations

We present a macroscopic model for electron transport in silicon, in which the state variables are moments of the electron distribution functions. The evolution equations are obtained from the Boltzmann transport equations and are closed by means of the maximum entropy principle (MEP). Analytic approximations are used for the electron and phonon dispersion relations. All the main scattering mechanisms electrons undergo in silicon are taken into account.