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The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality
- Source :
- Applied Physics Letters. 97:183505
- Publication Year :
- 2010
- Publisher :
- AIP Publishing, 2010.
-
Abstract
- In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm2 cells.
- Subjects :
- Amorphous silicon
Physics and Astronomy (miscellaneous)
Passivation
Silicon
Inorganic chemistry
chemistry.chemical_element
Solar-Cells
02 engineering and technology
complex mixtures
01 natural sciences
7. Clean energy
chemistry.chemical_compound
Crystalline Silicon
Plasma-enhanced chemical vapor deposition
0103 physical sciences
Rf
Crystalline silicon
Deposition
Spectroscopy
010302 applied physics
business.industry
Physics
technology, industry, and agriculture
Nanocrystalline silicon
Heterojunction
equipment and supplies
021001 nanoscience & nanotechnology
Silane
chemistry
Plasmas
Transition
Optoelectronics
Microcrystalline Silicon
0210 nano-technology
business
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 97
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....9d3bd3fc13295025b334e754eb1cfddf
- Full Text :
- https://doi.org/10.1063/1.3511737