Back to Search Start Over

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

Authors :
Loris Barraud
G. Choong
Antoine Descoeudres
F. Zicarelli
R. Bartlome
Stefaan De Wolf
Christophe Ballif
Source :
Applied Physics Letters. 97:183505
Publication Year :
2010
Publisher :
AIP Publishing, 2010.

Abstract

In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells, yielding aperture efficiencies up to 20.3% on 4 cm2 cells.

Details

ISSN :
10773118 and 00036951
Volume :
97
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi.dedup.....9d3bd3fc13295025b334e754eb1cfddf
Full Text :
https://doi.org/10.1063/1.3511737