Advanced modeling and characterization techniques for innovative memory devices: The RRAM case

In this chapter, we focus on the necessary interplay between “modeling for characterization” and “characterization for modeling” approaches for a detailed yet manageable physics-based description of resistive random access memory (RRAM) device operations. Particularly, the “modeling for characterization” is based on a multiscale modeling platform that accounts for all the relevant physical mechanisms involved in charge transport and structural changes at the basis of resistive switching. The “characterization for modeling” instead provides a set of specific characterization methodologies to support the simulation engine and to confirm its results. The excellent agreement between the multiscale model predictions and the experimental results obtained on different material systems and device structures confirms the accuracy of the proposed solution. This makes the proposed platform a tool for the analysis of RRAM technologies and TCAD-assisted material/device codesign, potentially accelerating the introduction of RRAM-based solutions for several different applications.