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InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice
InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice
- Publication Year :
- 2011
-
Abstract
- In this paper, we report the design, fabrication, and characterization of an InP/InGaAs heterojunction bipolar transistor (HBT) employing a lattice-mismatched In(0.53)Ga(0.47)As/GaAs strained-layer-superlattice (SLS) base structure. The performance of the SLS-base device is also compared with that of an In(0.53)Ga(0.47)As uniform-base structure. The digitally graded-base devices exhibit a slightly lower gain at low bias voltage and a higher current gain at high currents. While the offset voltage remains comparable in the two structures, the graded-base InP/InGaAs HBTs, with built-in fields of - 66 kV/cm, have typically a maximum dc current gain of 18% larger than that of transistors with uniform base.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Input offset voltage
Heterostructure-emitter bipolar transistor
business.industry
Heterojunction bipolar transistor
Transistor
Bipolar junction transistor
Heterojunction
Biasing
law.invention
Gallium arsenide
chemistry.chemical_compound
chemistry
law
Optoelectronics
business
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....99d0bb91479db0a4cdbbfcf0341b2167