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InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice

InP-based heterojunction bipolar transistors with InGaAs/GaAs strained-layer-superlattice

Authors :
H. Güllich
Quankui Yang
Oliver Ambacher
Michael Schlechtweg
Rachid Driad
M. Maier
Rolf Aidam
Publica
Publication Year :
2011

Abstract

In this paper, we report the design, fabrication, and characterization of an InP/InGaAs heterojunction bipolar transistor (HBT) employing a lattice-mismatched In(0.53)Ga(0.47)As/GaAs strained-layer-superlattice (SLS) base structure. The performance of the SLS-base device is also compared with that of an In(0.53)Ga(0.47)As uniform-base structure. The digitally graded-base devices exhibit a slightly lower gain at low bias voltage and a higher current gain at high currents. While the offset voltage remains comparable in the two structures, the graded-base InP/InGaAs HBTs, with built-in fields of - 66 kV/cm, have typically a maximum dc current gain of 18% larger than that of transistors with uniform base.

Details

Language :
English
Database :
OpenAIRE
Accession number :
edsair.doi.dedup.....99d0bb91479db0a4cdbbfcf0341b2167