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Innovative ESD Protections for UTBB FD-SOI Technology

Authors :: Yohann Solaro
Philippe Ferrari
Claire Fenouillet-Beranger
Sorin Cristoloveanu
D. Marin-Cudraz
Charles-Alexandre Legrand
Pascal Guyader
Pascal Fonteneau
Jeremy Passieux
L. Clement
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI)
Direction de Recherche Technologique (CEA) (DRT (CEA))
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS)
Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Joseph Fourier - Grenoble 1 (UJF)
STMicroelectronics [Crolles] (ST-CROLLES)
Michelin, Isabelle
Source :: International Electron Device meeting, IEDM 2013, International Electron Device meeting, IEDM 2013, Dec 2013, Washington DC, United States. pp.1-4, Techical Digest of the International Electron Devices Meeting 2013, IEDM 2013, IEDM 2013, Dec 2013, Washington, United States. pp.180-183, ⟨10.1109/IEDM.2013.6724580⟩
Publication Year :: 2013
Publisher :: HAL CCSD, 2013.
Abstract: We present an innovative set of UTBB (Ultra-Thin Body and BOX) ESD protection devices, which achieves remarkable performance in terms of leakage current and triggering control. Ultra-low leakage current below 0.1 pA/μm and adjustable triggering (1.1V

Subjects :: Engineering
current measurement
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
education
Silicon on insulator
Hardware_PERFORMANCEANDRELIABILITY
02 engineering and technology
01 natural sciences
law.invention
MOSFET
Hardware_GENERAL
law
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
0202 electrical engineering, electronic engineering, information engineering
Breakdown voltage
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
health care economics and organizations
ComputingMilieux_MISCELLANEOUS
010302 applied physics
Electrostatic discharge
leakage currents
business.industry
Transistor
Electrical engineering
electrostatic discharge
020206 networking & telecommunications
silicon-on-insulator
business
Hardware_LOGICDESIGN

Details

Language :: English
Database :: OpenAIRE
Journal :: International Electron Device meeting, IEDM 2013, International Electron Device meeting, IEDM 2013, Dec 2013, Washington DC, United States. pp.1-4, Techical Digest of the International Electron Devices Meeting 2013, IEDM 2013, IEDM 2013, Dec 2013, Washington, United States. pp.180-183, ⟨10.1109/IEDM.2013.6724580⟩
Accession number :: edsair.doi.dedup.....9924312fdeafad2cfce27fc026b20187
Full Text :: https://doi.org/10.1109/IEDM.2013.6724580⟩