Dark-Field Electron Holography for Strain Mapping

International audience; This chapter describes the dark‐field electron holography (DFEH) technique, which is used to measure strain to high precision, with nanometer spatial resolution and for micrometer fields of view. The technique has been applied successfully to a number of systems, from the MOSFET and FinFET devices and similar strained silicon devices, to strained layers, misfit dislocations therein and quantum dots. The technique can be powerfully combined with conventional holography to provide a complete study of strain and dopants in devices. The chapter addresses an important issue inherent to any TEM investigation of strain: the thin‐film effect. the study of hydrogen‐implanted silicon is also illustrated in the chapter.