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Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
- Publication Year :
- 2014
- Publisher :
- arXiv, 2014.
-
Abstract
- Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS2 layers. The van der Waals interface between graphene and MoS2 exhibits a Schottky barrier, thus enabling the possibility of well-defined current rectification. The height of the Schottky barrier can be strongly modulated by an external gate electric field owing to the small density of states of graphene. We obtain large current modulation exceeding 10^5 simultaneously with a large current density of ~10^4 A/cm^2 , thereby demonstrating the superior performance of the exfoliated-graphene/MoS2/metal vertical field effect transistor
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
Condensed Matter - Mesoscale and Nanoscale Physics
business.industry
Graphene
Schottky barrier
Transistor
FOS: Physical sciences
Heterojunction
law.invention
law
Electric field
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Density of states
Optoelectronics
Field-effect transistor
business
Current density
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....98b545e7b171fa53fdaade2ed96417e2
- Full Text :
- https://doi.org/10.48550/arxiv.1408.6942