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Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors
- Source :
- MIT web domain
- Publication Year :
- 2011
- Publisher :
- IEEE, 2011.
-
Abstract
- In this work, we investigate the time evolution of electrical degradation of GaN high electron mobility transistors under high voltage stress in the OFF state. We found that the gate current starts to degrade first, followed by degradation in current collapse and eventually permanent degradation in I[subscript D]. We also found that the time evolution of gate current degradation is unaffected by temperature, while drain current degradation is thermally accelerated.
- Subjects :
- Materials science
business.industry
Transistor
Wide-bandgap semiconductor
Electrical engineering
High voltage
Gallium nitride
Hardware_PERFORMANCEANDRELIABILITY
High-electron-mobility transistor
law.invention
Stress (mechanics)
chemistry.chemical_compound
chemistry
law
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Current (fluid)
business
Degradation (telecommunications)
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2011 International Reliability Physics Symposium
- Accession number :
- edsair.doi.dedup.....989b2c257527a9b1058798bfe4a5ead8