Cite
Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology
MLA
Andrea Parisi, et al. “Accelerated Reliability Testing of Flash Memory: Accuracy and Issues on a 45nm NOR Technology.” Proceedings of 2013 International Conference on IC Design & Technology (ICICDT), May 2013. EBSCOhost, https://doi.org/10.1109/icicdt.2013.6563298.
APA
Andrea Parisi, S. Beltrami, Alessandro S. Spinelli, Christian Monzio Compagnoni, Carmine Miccoli, Marcello Calabrese, Luca Chiavarone, Angelo Visconti, Andrea L. Lacaita, & Sebastiano Bartolone. (2013). Accelerated reliability testing of flash memory: Accuracy and issues on a 45nm NOR technology. Proceedings of 2013 International Conference on IC Design & Technology (ICICDT). https://doi.org/10.1109/icicdt.2013.6563298
Chicago
Andrea Parisi, S. Beltrami, Alessandro S. Spinelli, Christian Monzio Compagnoni, Carmine Miccoli, Marcello Calabrese, Luca Chiavarone, Angelo Visconti, Andrea L. Lacaita, and Sebastiano Bartolone. 2013. “Accelerated Reliability Testing of Flash Memory: Accuracy and Issues on a 45nm NOR Technology.” Proceedings of 2013 International Conference on IC Design & Technology (ICICDT), May. doi:10.1109/icicdt.2013.6563298.