Cspbbr3 And Cs4Pbbr6-Cspbbr3 Composite Perovskite Sensitization Of 3D-Zno Nanostructures For Enhanced Photoluminescence Emission

This study reports a seeding-layer free synthesis of nanostructured three-dimensional zinc oxide (3D-ZnO) thin films via a simple and cost-effective chemical bath deposition method (CBD) followed by their sensitization with inorganic perovskite halide semiconductors for luminescence-based applications. The emission abilities of pristine ZnO nanostructures have been enhanced with the incorporation of CsPbBr3 in the cubic crystal phase, which is proven to be a highly stable member of the inorganic halide perovskite family. Additionally, the transformation of CsPbBr3 nanocrystals into Cs4PbBr6–CsPbBr3 composite structure has been attained by altering the (i) CsBr content and (ii) crystallization temperature during the perovskite synthesis step, resulting in a remarkable luminescence increase for the overall structure by ~17 folds. A detailed evaluation of defect contents and carrier lifetimes of pristine and perovskite deposited ZnO thin films have been conducted via time-resolved photoluminescence spectroscopy showing an improved electron transfer especially for Cs4PbBr6–CsPbBr3 deposited ZnO thin films.