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Single event upset reliability assessment for RAM based on maximum entropy principle and bootstrap

Authors :
Guicui Fu
Wendi Guo
Yutai Su
Zhongqing Zhang
Bo Wang
Source :
Zhang, Z, Fu, G, Guo, W, Su, Y & Wang, B 2019, Single event upset reliability assessment for RAM based on maximum entropy principle and bootstrap . in Proceedings-2018 Prognostics and System Health Management Conference, PHM-Chongqing 2018 . https://doi.org/10.1109/PHM-Chongqing.2018.00039
Publication Year :
2019

Abstract

In the harsh radiation environment, Random Access Memory (RAM) fails due to Single Event Upset (SEU). The failure of the RAM seriously threatens the safety and reliability of on-orbit spacecraft. For devices with Error Detection and Correction (EDAC) enhanced, this paper provides a reliability assessment methodology using small sample test data combined with Maximum Entropy Principle (MEP) and Bootstrap. First, using ground and orbit test data with MEP, the optimal distribution function of SEU rate is determined. Second, the confidence intervals of the function arguments under different confidence levels are estimated by the parametric Bootstrap method. Then, a Single Event Upset reliability assessment methodology is proposed for RAM with EDAC enhanced. Finally, using the ground and orbit test data combined with above methods, a case study of reliability assessment for RAM is given. The assessment can be combined with small sample data to quantitatively evaluate the reliability of RAM under EDAC enhanced. The assessment methodology in this paper has the characteristics of strong applicability and good portability.

Details

Language :
English
Database :
OpenAIRE
Journal :
Zhang, Z, Fu, G, Guo, W, Su, Y & Wang, B 2019, Single event upset reliability assessment for RAM based on maximum entropy principle and bootstrap . in Proceedings-2018 Prognostics and System Health Management Conference, PHM-Chongqing 2018 . https://doi.org/10.1109/PHM-Chongqing.2018.00039
Accession number :
edsair.doi.dedup.....965fa7c08368def5c2dac50f54cdee4c
Full Text :
https://doi.org/10.1109/PHM-Chongqing.2018.00039