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Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications
- Source :
- Electronics, Vol 9, Iss 2, p 332 (2020), Electronics, Volume 9, Issue 2
- Publication Year :
- 2020
- Publisher :
- MDPI AG, 2020.
-
Abstract
- High-power switching applications, such as thyristor valves in a high-voltage direct current converter, can use 4H-SiC. The numerical simulation of the 4H-SiC devices requires specialized models and parameters. Here, we present a numerical simulation of the 4H-SiC thyristor on an N+ substrate gate current during the turn-on process. The base-emitter current of the PNP bipolar junction transistor (BJT) flow by adjusting the gate potential. This current eventually activated a regenerative action of the thyristor. The increase of the gate current from P+ anode to N+ gate also decreased the snapback voltage and forward voltage drop (Vf). When the doping concentration of the P-drift region increased, Vf decreased due to the reduced resistance of a low P-drift doping. An increase in the P buffer doping concentration increased Vf owing to enhanced recombination at the base of the NPN BJT. There is a tradeoff between the breakdown voltage and forward characteristics. The breakdown voltage is increased with a decrease in concentration, and an increase in drift layer thickness occurs due to the extended depletion region and reduced peak electric field.
- Subjects :
- sic
Materials science
Computer Networks and Communications
lcsh:TK7800-8360
02 engineering and technology
power device
01 natural sciences
Depletion region
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Breakdown voltage
Electrical and Electronic Engineering
snapback
forward voltage drop
thyristor
010302 applied physics
gate current
business.industry
020208 electrical & electronic engineering
Bipolar junction transistor
Direct current
lcsh:Electronics
Thyristor
Anode
Snapback
Hardware and Architecture
Control and Systems Engineering
Signal Processing
Optoelectronics
business
Voltage
Subjects
Details
- Language :
- English
- ISSN :
- 20799292
- Volume :
- 9
- Issue :
- 2
- Database :
- OpenAIRE
- Journal :
- Electronics
- Accession number :
- edsair.doi.dedup.....96571e5bb0467a1204c18e8e41f4fced