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Failure Modes and Mechanisms of DC-Aged GaN LEDs
- Source :
- physica status solidi (a). 194:389-392
- Publication Year :
- 2002
- Publisher :
- Wiley, 2002.
-
Abstract
- This paper presents failure modes observed in long-term aging of high-brightness GaN/InGaN LEDs. The blue LEDs submitted to DC aging test present large decrease of emitted optical power and increase of diode reverse leakage current. Increase of parasitic series resistance, suggesting contact degradation, has also been found in stressed sample, together with apparent carrier density increases and reduction of the junction depletion width. Furthermore stressed LEDs present modification of a specific trap property: trap activation energy decreases from 340 meV in the virgin sample down to 75 meV in the stressed sample. Generation of non-radiative recombination centers seems to be one of the dominant failure mechanisms responsible for the observed electrical and optical LED degradations.
- Subjects :
- reliability
Indium nitride
light emitting diodes
InGaN
degradation
Equivalent series resistance
Chemistry
business.industry
Contact resistance
Gallium nitride
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
law.invention
chemistry.chemical_compound
Reverse leakage current
Optics
law
Optoelectronics
business
Light-emitting diode
Non-radiative recombination
Diode
Subjects
Details
- ISSN :
- 1521396X and 00318965
- Volume :
- 194
- Database :
- OpenAIRE
- Journal :
- physica status solidi (a)
- Accession number :
- edsair.doi.dedup.....95979e4709303eaf9794c17b66be0467